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Title: |
Semiconductor Research Trends |
Search Result:
| Edited by: |
Kenneth G Sachs |
| ISBN10-13: |
1600215793 : 9781600215797 |
| Illustrations: |
tables & charts |
| Format: |
Hardback |
| Size: |
180x260mm |
| Pages: |
399 |
| Weight: |
1.096 Kg. |
| Published: |
Nova Science Publishers, Inc (US) - February 2007 |
| List Price: |
234.99 Pounds Sterling |
| Availability: |
Temporarily Out of Stock, more expected soon
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| Subjects: |
Semi-conductors & super-conductors |
| This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability. |
| Table of Contents: |
| Preface ; Nitride Vertical-Cavity Surface-Emitting Diode Lasers: Problems to be solved; Current Research of CdS Thin Films for their Application to Solar Cells; Charge Carrier Transport in Organic Semiconductor Thin Film Devices; Lanthanum-based Oxides as High K Gate Dielectrics for next generation MOS devices; Tip assisted Terahertz Wave Emission Microscopy; ; Delta Doping in HFETs; Surface Treatment, Metal Electrode Contact & Indium doping behavior of Cd, Zn, Te Crystals; Polysilicon-Al based Ohmic Contact on p-Type 3C-SiC Film Grown on Silicon Substrate; Relatively Short Spin Chains as Building Blocks for an All-Quantum Dot Quantum Computer Architecture; Localized Vibrational Modes in Semiconductor Superlattices with Structural Defect Layers; General Performance Characteristics of Semiconductor Thermoelectric Generators & their Optimal Matching Loads;; Exchange-enhanced Spin splitting in two-dimensional Electron Gases in the presence of the Rashba; A New Analytical Model for Heterojunction Bipolar Transistors; Index. |
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